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As a kind of magnetic topological insulator, manganese bismuth tellurium crystal (MnBi 2 Te 4 ) has attracted much attention since it was discovered; its quantization phenomenon is generally observed in experiments with the aid of an external magnetic field
Recently, the research team of Academician Xie Xincheng of the Center for Quantum Materials Science, School of Physics, Peking University, in collaboration with Professor Jiang Hua and Professor Chen Chuizhen of the School of Physics Science and Technology of Soochow University, proposed a physical image of the coexistence of quantum Hall effect and quantum anomalous Hall effect (below): In the absence of a magnetic field, Anderson’s disorder causes the bulk electrons to be localized, and the system behaves as a quantum anomalous Hall state with Chen number C=1; while under a strong magnetic field, the localized bulk electrons can form a bright The corresponding quantum Hall edge state is formed by the channel energy level, so that the quantum Hall edge state and the quantum anomalous Hall edge state coexist, and the system behaves as the Chen number C=2
Coexisting image of quantum Hall phase and quantum anomalous Hall phase in disordered MnBi 2 Te 4 under strong magnetic field (a), Hall resistance of fixed Fermi surface (b) and corresponding phase diagram (c)
December 3, 2021, the relevant research in "disorder magnetic TIs of MnBi 2 Te .
The above-mentioned research work is supported by the National Key Research and Development Program, the National Major Scientific Research Program, the National Natural Science Foundation of China, the Strategic Leading Science and Technology Project of the Chinese Academy of Sciences, and the Topological Quantum Computing Excellence Innovation Center of the Chinese Academy of Sciences