Gao Peng, a researcher from the Quantum Materials Science Center of the School of Physics, and his collaborators have heteroepitaxially grown a quasi-single crystal gallium nitride film on a glass substrate for the first time

Researcher Gao Peng from the Quantum Materials Science Center of the School of Physics and his collaborators cleverly used the lattice of graphene to guide the lattice arrangement of nitrides, successfully heterogeneous epitaxy of high-quality quasi-single crystal gallium nitride films on amorphous glass substrates, and Fabrication of light-emitting devices

The third generation of semiconductors represented by gallium nitride (GaN) and aluminum nitride (AlN) is the key development direction determined in the national "14th Five-Year Plan" and the 2035 long-term goal outline.

Recently, the joint research team of Peking University, the Institute of Semiconductors of the Chinese Academy of Sciences (hereinafter referred to as "the Institute of Semiconductors of the Chinese Academy of Sciences"), and the Beijing Institute of Graphene has cleverly used the lattice of graphene to guide the lattice arrangement of nitrides on an amorphous glass substrate.

The glass substrate has its own advantages such as large size and low price.

Related research results were published on July 30, 2021 under the title of " Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer " ( Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer ) In "Science Advances" ( Science Advances ); Ren Fang, a Ph.

The above work was supported by the National Key Research and Development Program, the National Natural Science Foundation of China, the Electron Microscopy Laboratory of Peking University, and the Collaborative Innovation Center for Quantum Matter Science

Lattice Guidance of Graphene Buffer Layer on Amorphous Glass