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    Graphene preparation method

    • Last Update: 2020-12-17
    • Source: Internet
    • Author: User
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    Graphene preparation method
    mechine stripping method
    mechanical peeling method is the use of friction and relative motion between objects and graphene, graphene thin layer material method. This method is simple to operate, and the resulting graphene usually maintains a complete crystal structure. In 2004, two British scientists used transparent tape to layer-stripping natural graphite to obtain graphene, which was once considered to be inefficient and unable to industrialize mass production of . Although this method can prepare micron-sized graphene, but its controllability is low, it is difficult to achieve large-scale synthesis.
    Oxidation method
    Oxidation method is the use of chemical reagents such as sulphuric acid, nitric acid and potassium permanganate, hydrogen peroxide and other oxidants to oxidize natural graphite, increase the spacing between graphite layers, insert oxides between graphite layers and layers, to create graphite oxide
    (Graphite Oxide)
    . The reactant is then washed and the washed solids are dried at low temperature to make graphite oxide powder. Graphene oxide is made by physical peeling, high temperature expansion and other methods. Finally, graphene oxide is reduced by chemical method, and the graphene
    (RGO)
    . This method is simple to operate and has high yield, but the quality of the product is low. Redox method uses sulfuric acid, nitric acid and other strong acids, there is a greater risk, but also need to use a large amount of water for cleaning, with large and larger environmental pollution.
    graphene, which is prepared by using redox legal system, contains a wealth of oxygen-containing energy groups and is easy to change. However, due to the reduction of graphene oxide, it is more difficult to control the oxygen content of graphene after reduction, while graphene oxide in the sun exposure, high temperature in the transport of the car and other external influences will continue to restore, so the quality of graphene production by redox method batch by batch is often inconsistent, difficult to control the quality.the
    orientation appendage method
    orientation appendage method is the use of growth substation atomic structure "species" graphene, first let the carbon atoms at 1150 degrees C seep into the palladium, and then cool down to 850 degrees C, before absorbing a large number of carbon atoms will float to the surface of the palladium, the final lens shape of a single layer of carbon atoms will grow into a complete layer of graphene. After the first layer is covered, the second layer begins to grow. The bottom layer of graphene interacts strongly with the palladium, while the second layer is almost completely separated from the palladium, leaving only weak electrical coupling. However, graphene sheets produced in this way tend to be unevenly thick, and the bonding between graphene and the substate affects the properties of the carbon layer.
    silicon carbide extension method is
    The SiC extension method obtains SiC-based graphene by sublimation of silicon atoms from the material at high temperatures in ultra-high vacuums, and the remaining C atoms are reconstructed in self-grouping form. This method can obtain high-quality graphene, but this method requires more equipment.
    Hermer method
    graphite oxide prepared by Hummer legal system, graphite oxide into the water ultrasonic dispersion, forming a uniform dispersion, mass concentration of 0.25g/L to 1g/L graphene oxide solution, and then to the graphene oxide solution with a drop mass concentration of 28% ammonia Water; the reducing agent dissolved in water, forming a water solution with a mass concentration of 0.25g/L to 2g/L; the prepared graphene oxide solution and reducing agent aqueous solution were mixed evenly, and the resulting mixture solution was stirred under oil bath conditions, and after the reaction, the mixture was filtered and washed and dried to obtain graphene.
    chemical vapor deposition method
    chemical vapor deposition method (CVD) is a method of gas phase deposition of graphene film using carbon-containing organic gas as raw material. This is currently the most effective method for the production of graphene films. The graphene prepared by this method has the characteristics of large area and high quality, but the cost is high at this stage, and the process conditions need to be further improved. Because graphene films are thin in thickness, large areas of graphene films cannot be used alone and must be attached to macro devices for use, such as touch screens, heating devices, etc.
    The low-pressure vapor deposition method is used by some scholars to generate single-layer graphene on the Ir surface, and further research suggests that this graphene structure can span metal steps, with continuous and micron-scale single-layer carbon structures gradually forming on the Ir surface. The mm-magnitude monocrystalline graphene is obtained by using surface partialization. The cm scale of graphene and the extension of growth graphene on polycrystalline Ni film were discovered by some scholars, heating the surface of Ni membrane 300 nanometers thick at 1000 degrees C, while exposing it in the atmosphere of CH
    4
    , after a period of reaction, a large area of a small number of layers of graphene film will form on the metal surface.
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