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At the time when information technology is prevalent, the storage system, which is the key base of the information industry, is also undergoing tremendous changes
.
Take the past ten years as an example, the rapid rise of flash memory media, the capacity of hard disks from hundreds of GB to tens of TB; new network interconnection technologies continue to iterate, and various new concepts have emerged, such as data grading, deduplication, and RAID 2.
0, distributed EC, FCoE, NVMe the like; various new types of storage technology continuously updated, such fusion memory, CI, HCI, public cloud storage, SDS, and other object store
.
As far as flash memory technology is concerned, researchers have now developed non-volatile memory that can write data in just a few nanoseconds
.
This makes it thousands of times faster than commercial flash memory and comparable to the dynamic RAM in most computers
.
Currently, the researchers have detailed their findings online in the journal Nature Nanotechnology
.
The new device consists of atomically thin layers of two-dimensional materials
.
Previous studies have found that when two or more thin layers of atoms of different materials are stacked on top of each other to form a so-called heterostructure, new hybrid properties will appear
.
These layers are usually held together by a weak current called van der Waals interactions, which usually causes the tapes to stick together
.
Scientists from the Institute of Physics of the Chinese Academy of Sciences and their colleagues pointed out that the speed of silicon-based memory is ultimately limited because the inevitable defects in the ultra-thin silicon film will reduce performance
.
They believe that the atomically flat van der Waals heterostructure can avoid such problems
.
The researchers fabricated a van der Waals heterostructure consisting of an indium selenide semiconductor layer, a hexagonal boron nitride insulating layer, and multiple conductive graphites on top of silicon dioxide and silicon wafers.
Olefin layer composition
.
A voltage pulse lasting only 21 nanoseconds can inject charge into graphene to write or erase data
.
The intensity of these pulses is about the same as the intensity of the pulses used for writing and erasing in commercial flash memory
.
In addition to speed, a key feature of this new memory is the ability to store multiple bits
.
Conventional storage devices can store zero or one data bits by switching between, for example, a high conductivity state and a low conductivity state
.
The researchers pointed out that their new device can theoretically store multiple data bits with multiple electrical states, each state using a different voltage pulse sequence for writing and erasing
.
Scientists expect their devices to store 10 years of data-the new memory is not only about 5,000 times faster, but can store multiple data bits instead of just zeros and ones
.
This is an era of technological innovation.
Innovation is happening in all industries.
The more innovations, the more possibilities for the future, including flash memory
.
.
Take the past ten years as an example, the rapid rise of flash memory media, the capacity of hard disks from hundreds of GB to tens of TB; new network interconnection technologies continue to iterate, and various new concepts have emerged, such as data grading, deduplication, and RAID 2.
0, distributed EC, FCoE, NVMe the like; various new types of storage technology continuously updated, such fusion memory, CI, HCI, public cloud storage, SDS, and other object store
.
As far as flash memory technology is concerned, researchers have now developed non-volatile memory that can write data in just a few nanoseconds
.
This makes it thousands of times faster than commercial flash memory and comparable to the dynamic RAM in most computers
.
Currently, the researchers have detailed their findings online in the journal Nature Nanotechnology
.
The new device consists of atomically thin layers of two-dimensional materials
.
Previous studies have found that when two or more thin layers of atoms of different materials are stacked on top of each other to form a so-called heterostructure, new hybrid properties will appear
.
These layers are usually held together by a weak current called van der Waals interactions, which usually causes the tapes to stick together
.
Scientists from the Institute of Physics of the Chinese Academy of Sciences and their colleagues pointed out that the speed of silicon-based memory is ultimately limited because the inevitable defects in the ultra-thin silicon film will reduce performance
.
They believe that the atomically flat van der Waals heterostructure can avoid such problems
.
The researchers fabricated a van der Waals heterostructure consisting of an indium selenide semiconductor layer, a hexagonal boron nitride insulating layer, and multiple conductive graphites on top of silicon dioxide and silicon wafers.
Olefin layer composition
.
A voltage pulse lasting only 21 nanoseconds can inject charge into graphene to write or erase data
.
The intensity of these pulses is about the same as the intensity of the pulses used for writing and erasing in commercial flash memory
.
In addition to speed, a key feature of this new memory is the ability to store multiple bits
.
Conventional storage devices can store zero or one data bits by switching between, for example, a high conductivity state and a low conductivity state
.
The researchers pointed out that their new device can theoretically store multiple data bits with multiple electrical states, each state using a different voltage pulse sequence for writing and erasing
.
Scientists expect their devices to store 10 years of data-the new memory is not only about 5,000 times faster, but can store multiple data bits instead of just zeros and ones
.
This is an era of technological innovation.
Innovation is happening in all industries.
The more innovations, the more possibilities for the future, including flash memory
.