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    Home > Chemicals Industry > New Chemical Materials > New materials are 5000 times faster than traditional flash memory

    New materials are 5000 times faster than traditional flash memory

    • Last Update: 2021-06-11
    • Source: Internet
    • Author: User
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    At the time when information technology is prevalent, the storage system, which is the key base of the information industry, is also undergoing tremendous changes
    .
    Take the past ten years as an example, the rapid rise of flash memory media, the capacity of hard disks from hundreds of GB to tens of TB; new network interconnection technologies continue to iterate, and various new concepts have emerged, such as data grading, deduplication, and RAID 2.
    0, distributed EC, FCoE, NVMe the like; various new types of storage technology continuously updated, such fusion memory, CI, HCI, public cloud storage, SDS, and other object store
    .
    As far as flash memory technology is concerned, researchers have now developed non-volatile memory that can write data in just a few nanoseconds
    .
    This makes it thousands of times faster than commercial flash memory and comparable to the dynamic RAM in most computers
    .
    Currently, the researchers have detailed their findings online in the journal Nature Nanotechnology
    .
    The new device consists of atomically thin layers of two-dimensional materials
    .
    Previous studies have found that when two or more thin layers of atoms of different materials are stacked on top of each other to form a so-called heterostructure, new hybrid properties will appear
    .
    These layers are usually held together by a weak current called van der Waals interactions, which usually causes the tapes to stick together
    .
    Scientists from the Institute of Physics of the Chinese Academy of Sciences and their colleagues pointed out that the speed of silicon-based memory is ultimately limited because the inevitable defects in the ultra-thin silicon film will reduce performance
    .
    They believe that the atomically flat van der Waals heterostructure can avoid such problems
    .
    The researchers fabricated a van der Waals heterostructure consisting of an indium selenide semiconductor layer, a hexagonal boron nitride insulating layer, and multiple conductive graphites on top of silicon dioxide and silicon wafers.
    Olefin layer composition
    .
    A voltage pulse lasting only 21 nanoseconds can inject charge into graphene to write or erase data
    .
    The intensity of these pulses is about the same as the intensity of the pulses used for writing and erasing in commercial flash memory
    .
    In addition to speed, a key feature of this new memory is the ability to store multiple bits
    .
    Conventional storage devices can store zero or one data bits by switching between, for example, a high conductivity state and a low conductivity state
    .
    The researchers pointed out that their new device can theoretically store multiple data bits with multiple electrical states, each state using a different voltage pulse sequence for writing and erasing
    .
    Scientists expect their devices to store 10 years of data-the new memory is not only about 5,000 times faster, but can store multiple data bits instead of just zeros and ones
    .
    This is an era of technological innovation.
    Innovation is happening in all industries.
    The more innovations, the more possibilities for the future, including flash memory
    .
    This article is an English version of an article which is originally in the Chinese language on echemi.com and is provided for information purposes only. This website makes no representation or warranty of any kind, either expressed or implied, as to the accuracy, completeness ownership or reliability of the article or any translations thereof. If you have any concerns or complaints relating to the article, please send an email, providing a detailed description of the concern or complaint, to service@echemi.com. A staff member will contact you within 5 working days. Once verified, infringing content will be removed immediately.

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