Professor Xu Cheng of China University of Mines and Academician Wang Zhonglin of the Institute of Nano Energy "ACS AMI": Oxygen Vacancy and Cation Valence...

As to when this most ancient old in families learn to ask questions of one of the contact touch from electricity , most early is at about 2 6 0 0 Nian front of the ancient Xi La hair now , though then this is the man who every day do not can avoid free all will be by the experience of now like , but it backAfter the composition processing machine manufactured by then suspended and not decided , a direct deposit in contention on
.

And based on the connection contact from electrical and Static electricity induced conduction efficiency should be made out of friction rub nano meters send electric machine ( T E N G ) as is a item new interest in technology art ,For the people who solution depends world community energy source to ask questions put for the a Ge new the option item , then touch since electricity also become as when the front of the research study hot spot of a

In Guo Kuang Ye Tai Xue Xu Cheng Fu Jiao Shou and the Ke hospital Bei Jing nano meter energy source and system integration research study by the king of the forest hospital with disabilities in " A C S A the p- the p- L i E d M A t E r i a l s & I n t e r f aC E S " of the Journal of the send table the title of " E F F E C T S O F O X Y G E n- V A C A n- C I E S A n- D C A T I O n- V A L E n c e S t a t e s o nt h e T r i b o e l e c t r i c P r o p e r t y o f S u b s t o i c h i o m e t r i c O x i d e F i L m S" in the text of Chapter ( D O the I: .

1 0 .

FIG 1taken by 2 0 S C C moxygen gas sink product of T I O _{2 - X} a thin film of properties can change based and friction rub electrical charge speech of ( A ) a thin film sheet surface shaped appearance ( B ) X- R & lt D junction result ( C ) thin film of a thickness of ( D- E )thin film table surface T I 2 P and O .

1 S to X- P S Spectrum ( F ) room temperature under the air the air in the back fire before the thin film of friction rubbing electrical charge density of .

FIG 2 taken with .

8 0 S C C m oxygen gas sink product of T I O _{2 - X} thin film friction rub electrical charge speech of ( A ) air gas are not the same the temperature of the back fire before the thin film at room temperature under a friction rub electric charge density of ( B ) a thin film TABLE surface T I 2 P of the X- P S spectrum ( C ) thin film of a thickness of ( D ) are not the same back fire strip member at the treatment after the thin film at room temperature under a friction rub electrical charge density of

FIG .

3 A L ₂ O _{.
3 - X}
thin film of resistance capable of variation of the friction rub electrically charged speech of ( A ) a thin film sheet surface shaped appearance ( B ) X- R & lt D junction results ( C ) thin film table surface ( C -D ) a L 2 P and O .
1 S is X- P S Spectrum ( E ) room temperature under .

FIG .

4 T A ₂ O _{.
5 - X}
and C R & lt ₂ O .

FIG .

5 T I O _{2 - X} group with the material quality the I M - T E N G S of properties can be ( A ) the I M - T E N G S is shown intended to FIG ( B - C ) by a back fire front and .
5 .

FIG 6 used in solution release gold metal and electrical dielectric substance in not the same temperature of the back fire in contact contact from the electrical machine manufactured in the table surface state of the mold type ( A - C ) gold metal and retreat thermal front power dielectric substance of between the electric charge transfer shift (D-F ) gold metal And T _.

1
the temperature of the back thermal after power dielectric substance of between the electric charge transfer shift ( G-I) gold metal and T ₂ the temperature of the back thermal after power dielectric substance of between the electric charge transfer shift .
T ₁ < T ₂ .

Phase off link connection

H T T P S : / / P U B S .
A C S .
O R & lt G / D O I / F U L L / .
1 0 .
.
1 0 2 .
1 / A C S A m I .
.
1 C 0 .
9 2 4 8