Progress has been made in a series of researches such as graphene

The unique structure of graphene contains rich and novel physics, which not only provides an important research platform for basic science, but also shows broad application prospects in the fields of electronics, optoelectronics, and flexible devices
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In order to give full play to the excellent properties of graphene and realize its industrial production and application, it is necessary to find a suitable material preparation method so that the prepared graphene can simultaneously meet the conditions of large area, high quality, and compatibility with existing silicon processes

In recent years, Gao Hongjun, an academician of the Chinese Academy of Sciences and a researcher at the Key Laboratory of Nanophysics and Devices at the Institute of Physics of the Chinese Academy of Sciences/Beijing National Research Center for Condensed Matter Physics, has led a team in the preparation, property control and application of graphene and graphene-like two-dimensional atomic crystal materials.
Research and exploration have been carried out in this regard, and a series of research results have been obtained
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In the early research work, the researchers found that the graphene epitaxially grown on the transition metal surface has the advantages of large area, high quality, continuous, and controllable layer number; further developed the heterogeneous element intercalation technology based on this system, The use of this technology can effectively avoid the complicated graphene transfer process, so that large-area, high-quality graphene single crystals can be placed on the heterogeneous element intercalation substrate without damage

On the basis of the above research, the research team’s postdoctoral fellow Guo Hui, doctoral student Wang Xueyan, and deputy chief engineer Huang Li, etc.
, through continuous efforts, realized the epitaxial silicon dioxide insulating intercalation of high-quality graphene on the metal surface, and constructed it in situ.
Graphene electronic devices
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The researchers realized the epitaxial growth of centimeter-sized, single-crystal graphene on the surface of Ru(0001); on this basis, they developed a step-by-step intercalation technique.

This research provides a new method for preparing large-area, high-quality graphene single crystals fused with silicon-based technology, and provides a basis for the application research of graphene materials and devices