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    Home > Chemicals Industry > Chemical Technology > University of Science and Technology of China develops new photoanode materials

    University of Science and Technology of China develops new photoanode materials

    • Last Update: 2021-08-14
    • Source: Internet
    • Author: User
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    Solar hydrogen production efficiency is expected to increase significantly

    Solar hydrogen production efficiency is expected to increase significantly

    Recently, the team of Academician Yu Shuhong of the University of Science and Technology of China, based on narrow band gap semiconductor materials, designed a lattice-matched morphological heterojunction photoanode material with near-infrared activity.
    The developed heterojunction exhibits Excellent photoelectrochemical hydrogen production performance
    .

    The direct conversion of solar energy into chemical fuels provides a way to store renewable energy
    .


    However, the practical application of photoelectrochemical hydrogen production is still hindered by its low energy conversion efficiency


    Narrow band gap semiconductors have the ability to absorb near-infrared spectra
    .


    However, the electron-phonon interaction in narrow band gap semiconductors will shorten the lifetime of photogenerated carriers, which will reduce the concentration of photogenerated holes on the catalyst surface, thereby reducing the probability of surface oxidation reactions


    The researchers designed a ternary alloy-based photoanode with a lattice-matched morphology heterojunction.
    The spectral absorption range of the electrode has been extended to 1100 nanometers, and the energy conversion efficiency of photoelectrochemical hydrogen production has been improved
    .


    The lattice-matched morphology heterojunction avoids the influence of lattice mismatch and reduces the existence of interface defects, which is beneficial to reduce the recombination rate of photo-generated carriers


    This study proposes a construction strategy for morphological heterostructures with near-infrared activity
    .


    By integrating the advantages of narrow band gap semiconductors into lattice-matched topography heterojunctions, it provides new possibilities for the design of effective near-infrared active photoelectrochemical devices


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