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    Home > Chemicals Industry > New Chemical Materials > Zhejiang University Hangzhou Science and Technology Innovation Center developed the first batch of silicon carbide wafers

    Zhejiang University Hangzhou Science and Technology Innovation Center developed the first batch of silicon carbide wafers

    • Last Update: 2021-06-12
    • Source: Internet
    • Author: User
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    At the two sessions this year, the "Outline" of China's "14th Five-Year Plan" clearly stated that it is necessary to accelerate the promotion of the wide bandgap semiconductor industry represented by silicon carbide and gallium nitride
    .
    ? Recently, the Hangzhou International Science and Innovation Center of Zhejiang University (hereinafter referred to as the Science and Technology Center) developed the first batch of silicon carbide wafers.
    This is the first batch of silicon carbide wafers that were successfully prepared at the end of last year (click to read more).
    An important development signifies that the Science and Technology Innovation Center has the ability to carry out high-level research in the processing of silicon carbide wafers
    .
    ? Silicon carbide (SiC) single crystal ingots and wafers developed by the Hangzhou International Science and Technology Center of Zhejiang University? 4H silicon carbide wafers that have attracted much attention? Most of the various circuit component structures we know are made on the basis of wafers Made
    .
    At present, in the field of high-voltage, high-frequency, and high-temperature electronic devices, 4H silicon carbide wafers are a well-deserved and important role
    .
    For example, power modules such as MOSFETs, MESFET devices, and Schottky diodes made on 4H silicon carbide wafers are regarded as key elements for the power density and efficiency improvement of new energy vehicle motor controllers
    .
    ? It is understood that this batch of silicon carbide wafers was developed by the Semiconductor Materials Research Laboratory of Advanced Semiconductor Research Institute of Science and Technology Innovation Center.
    The crystal type of silicon carbide wafers is 4H, the conductivity type is semi-insulating type, the diameter is 100 mm, and the thickness is 515 μm.

    .
    The total thickness variation (TTV) is ≤ 4 μm, the warpage (warp) is ≤ 10 μm, and the surface roughness (Ra) is 0.
    2 nm
    .
    The key technical indicators of these silicon carbide wafers have reached the advanced level in the field
    .
    ? Researchers said that in recent years, as a critical wide-bandgap semiconductor, silicon carbide has been highly valued by countries and regions such as the United States, Europe, and Japan
    .
    Due to high hardness, high brittleness, and stable chemical properties, traditional semiconductor wafer processing methods are not completely suitable for silicon carbide
    .
    The processing of silicon carbide wafers involves key processes such as cutting, grinding, and polishing.
    The development of high surface quality silicon carbide wafer processing technology is crucial to the realization of high-performance semiconductor silicon carbide devices
    .
    ? Among the various crystal types of silicon carbide, 4H silicon carbide is particularly favored due to its excellent comprehensive performance
    .
    At present, the semiconductor industry has an urgent need for low-resistance 4H silicon carbide with n-type conductivity and 4H silicon carbide with semi-insulating conductivity
    .
    The former is mainly used for power semiconductor devices, and its mainstream wafer size has reached 150 mm
    .
    The latter is mainly used for radio frequency semiconductor devices, and the mainstream wafer size is 100 mm
    .
    The successful development of the first batch of 100 mm semi-insulating 4H silicon carbide wafers by the Science Innovation Center is another solid step taken by the Science Innovation Center on the road of semiconductor silicon carbide research and development
    .
    ? Seize the future! Building a platform for wide-gap semiconductor materials and devices.
    Wide-gap semiconductors are recognized as "future materials" in the semiconductor industry.
    Whether in the military or the civilian market, they are strategic positions for countries all over the world to compete for
    .
    ? Facing major national strategies, currently, the Advanced Semiconductor Research Institute of the Science and Technology Innovation Center is committed to building an internationally advanced wide-gap semiconductor material and device research platform represented by silicon carbide, which provides for the development of China's wide-gap semiconductor industry Strong support
    .
    Under the leadership of the chief scientist, Academician Yang Deren, the Institute strives to continuously achieve new breakthroughs in the field of wide-bandgap semiconductors, focusing on the development and industrialization of wide-bandgap semiconductor materials, power chips, and radio frequency chips, and packaging, testing and application technologies.
    Service support, focusing on breaking through the key technical bottlenecks such as the growth of wide-bandgap semiconductor materials, the new structure design of wide-bandgap semiconductor power chips and radio frequency chips, and the development of advanced process technology, solving a number of "stuck neck" technical problems in the semiconductor field, and promoting semiconductors The rapid development of materials, chips, and integrated packaging and testing industrialization technologies have improved China's international competitiveness and influence in the field of wide-bandgap semiconductors
    .
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