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The team of Professor Li Fushan of Fuzhou University and researcher Qian Lei of Ningbo Institute of Materials used a combination of ordered molecular self-assembly technology and transfer printing technology to propose a new strategy to suppress leakage current of high-resolution devices, and prepared high-performance Ultra-high-resolution quantum dot light-emitting diodes
In recent years, driven by emerging concepts such as "metaverse" and smart medical care, next-generation displays have set higher standards for pixel resolution to meet the ever-escalating application needs of massive information and AR/VR displays
In this paper, the researchers used the ordered molecular self-assembly technology to realize the dense and defect-free quantum dot monolayer film, and combined the transfer printing technology to realize the ultra-high-resolution quantum dot display of sub-micron pixels, and the highest resolution reached ~ 25000PPI (human eye limit resolution is about 300PPI)
It is worth mentioning that the research team first proposed to embed a honeycomb patterned non-light-emitting charge blocking layer between the light-emitting quantum dot pixels.
According to reports, this new high-resolution patterning method can further realize full-color display in the future
(a) Schematic diagram of the LB-TP process; (b) Optical microscope image of the microstructured PDMS stamp; (cd) Scanning electron microscope image of the microstructured PDMS stamp (diameter, spacing and height are all 500 nm)