Graphene purified by new technology is more stable, and its performance remains unchanged after ten minutes of contact with ozone

Russian, French, Swedish and Greek scientists have jointly developed an industrial technology to purify graphene The new method makes graphene more stable and "harmless" even if exposed to ozone for 10 minutes The researchers said that this achievement is an important progress in the field of Nano Electronics Technology and will vigorously promote the development of this field Graphene is a kind of material 1 million times thinner than hair It is composed of single-layer carbon atoms arranged in honeycomb structure It has ultra-high conductivity, durability and ductility It can be used to manufacture a variety of nano electronic equipment In the production process, the polymer coating residue will "pollute" graphene and reduce the mobility of its internal loaders Thermal annealing, plasma degumming and chemical solvents can remove the polymer residues, but at the same time, the purity of graphene will be weakened Among them, the most commonly used purification method is to use ozone Although this method has high reactivity, ozone will destroy the residual polymer and cause defects in graphene, which will weaken its performance In view of this, scientists from the Moscow Institute of Engineering Physics (MEPHI) of the Russian National Nuclear Energy Research University have successfully obtained graphene with high stability by using the sublimate of high temperature silicon carbide (SIC) The performance of this kind of graphene will not change after contacting with ozone for more than 10 minutes, while that of ordinary graphene will be damaged in the same environment for three to four minutes In order to further verify the test results, scientists from Greece, France and Sweden, through computer modeling, have clarified why silicon carbide graphene is still "harmless" and more stable under the action of violent oxygen free radicals: the extraordinary stability of neographene is obviously related to the lower roughness of the extended graphene on the silicon carbide base The latest findings will help to better purify graphene, so as to obtain high-quality industrial graphene with stable electrical properties.