Sun Qijun, researcher of Beijing Institute of nano energy and system, Chinese Academy of Sciences and Wang Zhonglin, research team: a new MoS2 friction ion electronic transistor

Based on the effect of friction electrification and electrostatic induction, the introduction friction Nanogenerator (Teng) generates static charge through contact separation of two different materials, and converts the mechanical energy of external environment into electrical energy In recent years, it has made significant breakthroughs in many fields In addition, Teng can also regulate the electrical transport characteristics of carriers in semiconductors Recently, sun Qijun, researcher of Beijing Institute of nano energy and systems, Chinese Academy of Sciences, and Wang Zhonglin's research team prepared a new type of MoS 2 friction ion electronic transistor based on the principle of triboelectronics, which uses the friction potential to induce the formation of a double electric layer at the electrolyte / two-dimensional semiconductor interface（ Electric double layers (EDLS), which can efficiently control the electrical properties of two-dimensional material semiconductors This work shows a high-efficiency modulation of two-dimensional material semiconductor devices and low-power active logic circuits through external mechanical instructions It has great application prospects in the fields of human-computer interaction, electronic skin, intelligent sensor and other wearable devices Relevant research results were published in adv mater (DOI: 10.1002/adma.201806905) Introduction to the research group of researcher sun Qijun there are 10 researchers in the research group, including 5 doctoral students and 5 Master students At present, the research group relies on Beijing Institute of nano energy and system of Chinese Academy of Sciences to carry out basic and applied basic research in the fields of graphene and other two-dimensional materials and electronic devices, electronic skin, piezoelectric electronics, triboelectronics and self charging energy source package, with the core technology of nano energy and nano system as the research and development goal Representative achievements are as follows: (1) piezoelectric regulated semiconductor devices: regulated channel Fermi level (ACS Nano, DOI: 10.1021 / acsno 8b07477); regulated Schottky barrier (nano energy, 2018, 50, 598); piezoelectric write in nonvolatile memory (ACS Nano, 2016, 10, 11037); piezoelectric driven electronic skin (adv mater., 2015, 27, 3411) 。 (2) Friction potential regulated semiconductor devices: friction potential regulated double gate transistor (adv mater., 2018, 30, 1705088); friction ion electronics transistor (DOI: 10.1002/adma.201806905); direct contact friction electronics electronic skin (ACS Nano, 2018, 12, 9381) (3) Electronic skin sensor: self driving multi-stage sensor array (ACS Nano, 2018, 12, 254); high sensitive humidity sensor array (adv mater., 2017, 29, 1702076) (4) Piezoelectric / triboelectric potential controlled micro nano devices: piezoelectric / triboelectric self charging intelligent color changing energy package: (adv energy mater., 2018, 1800069); piezoelectric / triboelectric high stability nano generator (nano energy, DOI: 10.1016/j.nanoen 2018.12.062) Introduction to researcher sun Qijun, doctoral supervisor In 2013, he received his doctorate from Jiaquan University, South Korea From 2013 to 2015, he was engaged in postdoctoral research at POSCO University of technology and chengjunguan University in South Korea From 2015 to 2016, he served as a research professor in chengjunguan University In 2016, he joined Beijing nano Energy Institute of Chinese Academy of Sciences He has published more than 20 papers in adv mater., adv.energy mater, acsnano and other internationally renowned magazines Participated in important international conferences many times and made invitation reports It was selected into the Beijing overseas high level talents plan and the "hundred talents plan" of the Chinese Academy of Sciences A new type of molybdenum disulfide friction ion electronic transistor Teng In recent years, great breakthroughs have been made in many fields, including obtaining energy from a variety of mechanical movements, self driving mechanical induction system, high sensitive mass spectrometry analysis and mechanically triggered plasma at atmospheric pressure When the electrostatic field generated by Teng is coupled with capacitive devices (such as field-effect transistors), the transmission characteristics of carriers in the semiconductor channel can be effectively modulated by the friction potential, which forms the friction electronics transistor This concept was first proposed by the research team of Academician Wang Zhonglin in 2014 In order to prepare high-performance triboelectronic transistors, the author recently expanded the current switch ratio of triboelectronic transistors based on molybdenum disulfide to more than six orders of magnitude by using the capacitance coupling effect of double gate structure (adv.mater 2018, 30, 1705088); and the graphene friction electronic mechanical sensor is also simplified by plane design and direct contact mode (acsnano, 2018, 12, 9381) However, in view of the complex processing technology and general electrical properties before, in order to develop active friction electronic transistors with higher performance and simpler structure, more in-depth exploration is urgently needed for the basic physical properties research and related process engineering of the coupling between Teng and semiconductor devices For a typical field-effect transistor, people hope to get a gate dielectric layer with high specific capacitance, which can generate stronger electric field to accumulate more carriers in the semiconductor channel For ion controlled field effect transistors, using ionic gels as dielectric layers, positive and negative ions can move rapidly under the external gate voltage and accumulate at the electrolyte / semiconductor interface Meanwhile, the semiconductor channel can accumulate abundant carriers at the interface to form a double layer structure The double layer can be regarded as a capacitor with a high specific capacitance of 1 nm gap, which carries almost all the external gate voltage drops, and can generate a strong electric field inside, so as to effectively control the carrier density at the semiconductor channel interface This ion regulated double layer transistor can be used in high performance low power transistor and biochemical sensor In addition, the double layer also represents the interaction between ions and electrons, which leads to an interdisciplinary research field, i.e ion electronics, which controls the electronic properties through ion transport and rearrangement In the future era of the Internet of things, how to use external mechanical motion to trigger ion migration to obtain high-performance electrical devices is of great significance In this study, based on the principle of triboelectronics, the author has prepared a new type of MoS2 friction ion electronic transistor Driven by the friction potential generated by Teng in the contact separation mode, it causes the ion to migrate rapidly and gather at the electrolyte / semiconductor interface to form a double electric layer capacitor (Figure 1) The author further regulates the carrier transport characteristics in the channel of MoS2 transistor The tribo ion electronics connects the tribo potential modulation characteristics (triboelectronics) and the semiconductor characteristics (ion Electronics) of ion regulation Moreover, the MoS2 tribo ion electronics transistor can realize self driving and active control without additional gate voltage Fig 1 friction potential induces a double layer (source: Adv Mater.) friction potential to induce an ultra-high ratio double layer capacitance at the interface between ionic gels and molybdenum disulfide semiconductors The maximum capacitance reaches 5.9 F F cm -2, much larger than that of the traditional dielectric layer (for example, 300 nm SiO 2 dielectric, capacitance 11.5 nF Cm -2) ）The double layer capacitor can efficiently modulate the carrier transmission performance in the channel Fig 2 Schematic diagram and basic performance characterization of friction ion electronic transistor (source: adv mater.) ion regulated molybdenum disulfide transistor (Fig 2) has excellent electrical performance with sub threshold swing of 60 mV / Dec The MoS2 friction ion transistor can be operated actively without additional gate voltage in the enhanced mode The device shows low threshold (75 μ m) and steep switching characteristics (20 μ M / DEC) The switch ratio of the device is 104 Figure 3 Working principle and basic performance characterization in two working modes (source: adv mater.) by preset the initial state of friction nano generator, i.e the friction potential corresponding to the specified initial friction distance is zero potential, the friction ion electronic transistor can be in the enhanced mode and the depleted mode Working in two working modes (Fig 3), higher current switch ratio (107) and ultra-low off state current (0.1pA) can be achieved This work also shows the MoS2 friction ion electronic inverter (Figure 4) The corresponding gain of the inverter is 8.3 V / mm, and it has low power consumption and excellent electrical stability Figure 4 Friction ion electronics inverter and its performance characterization (source: adv mater.) Figure 5 Prospects of friction ion electronics in related fields (source: adv mater.) Friction ion electronics, the research field of coupling friction electrification characteristics, semiconductor characteristics and electrolyte, studies the semiconductor electrical characteristics of ion regulation driven by friction potential, which provides new physical characteristics combined with mechanical movement, and is the cross course of friction electronics and ion electronics In a word, friction ion Electronics will have potential application value in materials, information, environment, chemistry, biomedicine and other fields Nowadays, people and scientific research have been paid more and more attention in the economic life China has ushered in the "node of science and technology explosion" Behind the progress of science and technology is the work of countless scientists In the field of chemistry, in the context of the pursuit of innovation driven, international cooperation has been strengthened, the influence of Returned Scholars in the field of R & D has become increasingly prominent, and many excellent research groups have emerged in China For this reason, CBG information adopts the 1 + X reporting mechanism CBG information, chembeangoapp, chembeango official microblog, CBG wechat subscription number and other platforms jointly launch the column of "people and scientific research", approach the domestic representative research group, pay attention to their research, listen to their stories, record their demeanor, and explore their scientific research spirit.