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    Home > Zhang Yong research group and collaborators of the national nano science center of the Chinese Academy of Sciences made progress in the research of universal and scale preparation of two-dimensional quantum chips

    Zhang Yong research group and collaborators of the national nano science center of the Chinese Academy of Sciences made progress in the research of universal and scale preparation of two-dimensional quantum chips

    • Last Update: 2019-06-19
    • Source: Internet
    • Author: User
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    The two-dimensional (material) quantum sheet is the product of the continuous development and cross of two-dimensional materials and quantum systems Because it has both the intrinsic properties of two-dimensional materials, quantum confinement and prominent edge effects, it has been widely concerned However, the preparation methods of two-dimensional quantum chips are various and have their own characteristics, but there is no report on the preparation strategy with universality and scale at the same time On the one hand, the lack of universal and large-scale preparation methods greatly limits the industrial application of two-dimensional quantum chips; on the other hand, the systematic and in-depth study of the properties of two-dimensional quantum chips is in trouble Obviously, it is of great theoretical and practical significance to establish a universal and scale preparation method for two-dimensional quantum chips Zhang Yong, research group of National Center for nanoscience, Chinese Academy of Sciences, has successfully realized the scale preparation of transition metal disulfide compound intrinsic quantum tablets (nano lett 2017, 17, 7767-7772) The preparation method combines salt assisted ball milling and ultrasonic assisted solvent stripping Although it has achieved large-scale preparation, it still has limitations Compared with transition metal disulfide compounds (such as molybdenum disulfide, tungsten disulfide, etc., the in-plane fracture strength is 16-30 GPA), graphite and boron nitride have higher in-plane fracture strength (for example, the in-plane fracture strength of single graphene is up to 130 GPA; the in-plane fracture strength of a few layers of boron nitride is up to 70 GPA) Therefore, it is a great challenge to realize the universal and large-scale preparation of two-dimensional quantum chips directly from the (untreated) bulk layered materials through the whole physical (such as the whole mechanical / force) process Recently, Zhang Yong's research group, together with Liu Xinfeng's research group, Gao Peng's research group of Peking University and Che Yanke's research group of Institute of chemistry of Chinese Academy of Sciences, has achieved the universal and large-scale preparation of two-dimensional material quantum chips Starting from the graphite, boron nitride, molybdenum disulfide and tungsten disulfide bulk layered materials, the scale preparation of graphene quantum sheet, boron nitride quantum sheet, molybdenum disulfide quantum sheet and tungsten disulfide quantum sheet has been successfully realized by the all physical method of silicon ball assisted ball milling and ultrasonic assisted solvent stripping The single cycle yields are up to 35.5, 33.6, 30.2 and 28.2wt% respectively, which are 1-2 orders of magnitude higher than the existing methods, laying a solid foundation for the industrial application of two-dimensional quantum chips The two-dimensional quantum chips are all intrinsic structures, which provide a great convenience to explore their original properties and reveal the internal mechanism The establishment of this universal and scale preparation method makes it possible to build a complete database / library of two-dimensional quantum chips on the same protocol / standard, which will certainly accelerate the comprehensive and detailed exploration of two-dimensional quantum chips All of the above quantum chips have good dispersibility in solution and film, and show excellent performance For example, solid-state fluorescence has a lifetime of nanosecond, which meets the practical requirements; nonlinear saturated absorption has an absolute modulation depth of 59% and a relative modulation depth of 89%, which is equivalent to that of graphene monolayer; the saturation strength is as low as sub-10kw / cm 2 (sub-1nj / cm2), which is 1-2 orders of magnitude lower than previously reported Relevant research results were published on materials horizons (material Horizon 2019, DOI: 10.1039/c9mh00272c) in the form of inner cover The preparation method has applied for a Chinese invention patent The research was supported by the National Natural Science Foundation of China, the talent program of the Chinese Academy of Sciences and the launch fund of the national nano science center.
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