New Development of Ferroelectric Thin Film Heterointerface and Domain Configuration

Figure 1: Atomic-scale HAADF-STEM images of polarized head-to-head and tail-to-tail heterogeneous interfaces

Researchers Ma Xiuliang, Researchers Zhu Yinlian, Dr.

Figure 2: Periodic large-scale four-configuration vortex domain structure in a BiFeO3 film grown on an orthogonal PrScO3 (110) substrate

Figure 3: The evolution of a1/a2 domains in (a) 22 nm (b) 43 nm (c) 54 nm (d) 86 nm thick PbTiO3 thin films deposited on orthogonal GdScO3 (110) substrates

Figure 4: (a) Symmetric oxide electrode sandwiched periodic closed domain structure in PbTiO3 ferroelectric thin film; (b) Asymmetric oxide electrode sandwiched alternating ac domain structure in PbTiO3 ferroelectric thin film

The research team used the method of controlling the strain of the film by the substrate to obtain peculiar domain structures in the BiFeO3 multiferroic film and the PbTiO3 ferroelectric film subjected to tensile strain